DEPTH DISTRIBUTION OF PHOSPHORUS IONS IMPLANTED INTO SILICON-CRYSTALS

被引：16

作者：

BLOOD, P

DEARNALEY, G

WILKINS, MA

机构：

[1] MULLARD RES LABS, REDHILL, SURREY, ENGLAND

[2] ATOM ENERGY RES ESTAB, NUCL PHYS DIV, HARWELL, BERKSHIRE, ENGLAND

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1974年 / 21卷 / 04期

关键词：

D O I：

10.1080/00337577408232412

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：245 / 251

页数：7

共 10 条

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[3]

BRELOT A, 1972, P C DEFECTS SEMICOND, P191

[4] IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS [J].

DEARNALEY, G ;

FREEMAN, JH ;

GARD, GA ;

WILKINS, MA .

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[5]

DEARNALEY G, 1971, 2 P INT C ION IMPL S, P439

[6] INTERACTIONS OF POINT DEFECTS WITH IMPURITIES IN SILICON [J].

HIRATA, M ;

SAITO, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (02) :405-&

[7]

KIMMERLING LC, 1971, PHYS REV B, V3, P427

[8] ION-IMPLANTED PHOSPHOROUS IN SILICON - PROFILES USING C-V ANALYSIS [J].

MOLINE, RA .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3553-&

[9]

Titov V. V., 1970, Physica Status Solidi A, V2, P203, DOI 10.1002/pssa.19700020203

[10]

WATKINS GD, 1965, RADIATION DAMAGE SEM

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