ION-IMPLANTED PHOSPHOROUS IN SILICON - PROFILES USING C-V ANALYSIS

被引：48

作者：

MOLINE, RA

机构：

来源：

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D O I：

10.1063/1.1660769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3553 / &

共 15 条

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