ELECTRON-IRRADIATION DAMAGE IN SILICON CONTAINING HIGH-CONCENTRATIONS OF BORON

被引：41

作者：

BEAN, AR

MORRISON, SR

SMITH, RS

NEWMAN, RC

机构：

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1972年 / 5卷 / 04期

关键词：

D O I：

10.1088/0022-3719/5/4/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：379 / &

共 42 条

[1] 1-PHONON BAND-MODE ABSORPTION BY IMPURITY RESONANCES IN DIAMOND AND SILICON [J].

ANGRESS, JF ;

GOODWIN, AR ;

SMITH, SD .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1968, 308 (1492) :111-&

[2] A STUDY OF VIBRATIONS OF BORON AND PHOSPHORUS IN SILICON BY INFRA-RED ABSORPTION [J].

ANGRESS, JF ;

GOODWIN, AR ;

SMITH, SD .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1965, 287 (1408) :64-&

[3]

ANGRESS JF, 1964, P INT C LATTICE DYNA, P467

[4] INFRARED STUDY OF LOCALIZED VIBRATIONS IN SILICON DUE TO BORON AND LITHIUM [J].

BALKANSKI, M ;

NAZAREWICZ, W .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (04) :671-+

[5]

Bean A. R., 1970, Solid State Communications, V8, P175, DOI 10.1016/0038-1098(70)90074-8

[6] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J].

BEAN, AR ;

NEWMAN, RC ;

SMITH, RS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) :739-&

[7] INFRA-RED STUDY OF DEFECTS PRODUCED IN N-TYPE SILICON BY ELECTRON IRRADIATION AT LOW TEMPERATURES [J].

BEAN, AR ;

NEWMAN, RC .

SOLID STATE COMMUNICATIONS, 1971, 9 (04) :271-&

[8]

BEAN AR, 1971, THESIS U READING

[9] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED [J].

BOSOMWORTH, DR ;

HAYES, W ;

SPRAY, ARL ;

WATKINS, GD .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) :133-+

[10]

Brelot A., 1971, Radiation Effects, V9, P65, DOI 10.1080/00337577108242034

← 1 2 3 4 5 →