A STUDY OF VIBRATIONS OF BORON AND PHOSPHORUS IN SILICON BY INFRA-RED ABSORPTION

被引：57

作者：

ANGRESS, JF

GOODWIN, AR

SMITH, SD

机构：

来源：

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES | 1965年 / 287卷 / 1408期

关键词：

D O I：

10.1098/rspa.1965.0169

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：64 / &

共 29 条

[1]

ANGRESS JF, 1965, 1963 CIP C LATT DYN, P467

[2] THEORY OF INFRARED AND RAMAN PROCESSES IN CRYSTALS - SELECTION RULES IN DIAMOND AND ZINCBLENDE [J].

BIRMAN, JL .

PHYSICAL REVIEW, 1963, 131 (04) :1489-+

[3] SUGGESTED EXPERIMENT ON APPROXIMATE LOCALIZED MODES IN CRYSTALS [J].

BROUT, R ;

VISSCHER, W .

PHYSICAL REVIEW LETTERS, 1962, 9 (02) :54-&

[4] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].

CORBETT, JW ;

WATKINS, GD ;

CHRENKO, RM ;

MCDONALD, RS .

PHYSICAL REVIEW, 1961, 121 (04) :1015-&

[5] THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON [J].

DAWBER, PG ;

ELLIOTT, RJ .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521) :453-&

[6]

DAWBER PG, 1963, P ROY SOC LONDON, VA273, P222

[7]

DOLLING G, 1963, P S INELASTIC SCATTE, V2

[8]

EVANS T, 1963, P ROY SOC LOND A MAT, V270, P538

[9] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J].

FAN, HY ;

RAMDAS, AK .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1127-1134

[10]

FRITZ B, 1965, 1963 P INT C LATT DY, P485

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