INFRA-RED STUDY OF DEFECTS PRODUCED IN N-TYPE SILICON BY ELECTRON IRRADIATION AT LOW TEMPERATURES

被引：30

作者：

BEAN, AR

NEWMAN, RC

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(71)90175-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：271 / &

共 7 条

[1]

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[3]

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[5] INFRARED ABSORPTION BANDS IN CARBON- AD OXYGEN-DOPED SILICON [J].

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WHAN, RE ;

VOOK, FL .

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