INFRARED STUDIES OF DEFECT PRODUCTION IN N-TYPE SI - IRRADIATION-TEMPERATURE DEPENDENCE

被引：34

作者：

WHAN, RE

VOOK, FL

机构：

来源：

PHYSICAL REVIEW | 1967年 / 153卷 / 03期

关键词：

D O I：

10.1103/PhysRev.153.814

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：814 / &

共 33 条

[1]

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[2]

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[9]

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