INFRARED ABSORPTION BANDS IN CARBON- AD OXYGEN-DOPED SILICON

被引：17

作者：

VOOK, FL

STEIN, HJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1968年 / 13卷 / 10期

关键词：

D O I：

10.1063/1.1652462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：343 / &

共 14 条

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WATKINS, GD ;

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MCDONALD, RS .

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[2]

HROSTOWSKI HJ, 1967, PHYS REV, V107, P966

[3] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].

KAISER, W ;

KECK, PH .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :882-887

[4] VIBRATIONAL ABSORPTION OF CARBON IN SILICON [J].

NEWMAN, RC ;

WILLIS, JB .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) :373-&

[5] THE DIFFUSIVITY OF CARBON IN SILICON [J].

NEWMAN, RC ;

WAKEFIELD, J .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (3-4) :230-234

[6]

NEWMAN RC, 1962, METALLURGY SEMICONDU, V15, P201

[7] CONCERNING CARBON CONTENT IN SEMICONDUCTOR SILICON [J].

SCHINK, N .

SOLID-STATE ELECTRONICS, 1965, 8 (09) :767-&

[8]

SCHROEDER JB, 1962, METALLURGY SEMICO ED, V15, P201

[9]

STEIN HJ, 1967, B AM PHYS SOC, V12, P346

[10]

STEIN HJ, TO BE PUBLISHED

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