THE DIFFUSIVITY OF CARBON IN SILICON

[1] BALKANSKI M, 1960, CR HEBD ACAD SCI, V251, P1277

[2] THE PREPARATION OF SINGLE-CRYSTAL INGOTS OF SILICON BY THE PULLING TECHNIQUE [J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1958, 35 (10): : 360 - 365

[3] PRECIPITATION IN SILICON CRYSTALS CONTAINING ALUMINUM [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (04) : 707 - 714

[4] Calvin M., 1949, ISOTOPIC CARBON

[5] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 459 - 474

[6] THE IDENTIFICATION OF PRECIPITATE PARTICLES IN SINGLE CRYSTALS OF SILICON BY REFLECTION ELECTRON DIFFRACTION [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (492): : 993 - 996

[7] NEWMAN RC, 1958, P INT C SOLID STATE, P318

[8] VOLATILE IMPURITIES IN SILICON AND GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (12) : 1561 - 1561

[9] REISS H, 1959, SEMICONDUCTORS, P244

[10] SOLUBILITY OF CARBON IN SILICON AND GERMANIUM [J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (06) : 1551 - 1555

[1] BALKANSKI M, 1960, CR HEBD ACAD SCI, V251, P1277

[2] THE PREPARATION OF SINGLE-CRYSTAL INGOTS OF SILICON BY THE PULLING TECHNIQUE [J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1958, 35 (10): : 360 - 365

[3] PRECIPITATION IN SILICON CRYSTALS CONTAINING ALUMINUM [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (04) : 707 - 714

[4] Calvin M., 1949, ISOTOPIC CARBON

[5] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 459 - 474

[6] THE IDENTIFICATION OF PRECIPITATE PARTICLES IN SINGLE CRYSTALS OF SILICON BY REFLECTION ELECTRON DIFFRACTION [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (492): : 993 - 996

[7] NEWMAN RC, 1958, P INT C SOLID STATE, P318

[8] VOLATILE IMPURITIES IN SILICON AND GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (12) : 1561 - 1561

[9] REISS H, 1959, SEMICONDUCTORS, P244

[10] SOLUBILITY OF CARBON IN SILICON AND GERMANIUM [J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (06) : 1551 - 1555