GROWTH OF DISLOCATIONS DURING LASER MELTING AND SOLIDIFICATION

被引：11

作者：

NARAYAN, J

YOUNG, FW

机构：

[1] Solid State Division, Oak Ridge National Laboratory, Oak Ridge

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 04期

关键词：

D O I：

10.1063/1.91110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon crystals containing dislocations which terminated in the free surface were melted to depths of about 0.5 μm by rube-laser pulses, and the growth characteristics of dislocations of various types were studied by transmission electron microscopy. It was found that both edge- and screw-type dislocations grew in 〈113〉 directions that were not normal to the crystal-growth interface.

引用

页码：330 / 332

页数：3

共 10 条

[1] EPITAXIAL LASER CRYSTALLIZATION OF THIN-FILM AMORPHOUS SILICON
BEAN, JC
LEAMY, HJ
POATE, JM
ROZGONYI, GA
SHENG, TT
WILLIAMS, JS
CELLER, GK
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (03) : 227 - 230
[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES
BURTON, WK
CABRERA, N
FRANK, FC
[J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358
[3] Dash W., 1958, GROWTH PERFECTION CR
[4] GULZOW H, 1969, GROWTH CRYSTALS, V7, P82
[5] HIRSCH PB, 1965, ELECTRON MICROS, P175
[6] DEPTH OF MELTING PRODUCED BY PULSED-LASER IRRADIATION
NARAYAN, J
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 312 - 315
[7] COMPARATIVE-STUDY OF LASER AND THERMAL ANNEALING OF BORON-IMPLANTED SILICON
NARAYAN, J
YOUNG, RT
WHITE, CW
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3912 - 3917
[8] SPAEPEN F, 1978, P C LASER SOLID INTE
[9] LASER ANNEALING OF DIFFUSION-INDUCED IMPERFECTIONS IN SILICON
YOUNG, RT
NARAYAN, J
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 14 - 16
[10] LASER ANNEALING OF BORON-IMPLANTED SILICON
YOUNG, RT
WHITE, CW
CLARK, GJ
NARAYAN, J
CHRISTIE, WH
MURAKAMI, M
KING, PW
KRAMER, SD
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 139 - 141

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