EPITAXIAL LASER CRYSTALLIZATION OF THIN-FILM AMORPHOUS SILICON

被引：50

作者：

BEAN, JC ^{[1
]}

LEAMY, HJ ^{[1
]}

POATE, JM ^{[1
]}

ROZGONYI, GA ^{[1
]}

SHENG, TT ^{[1
]}

WILLIAMS, JS ^{[1
]}

CELLER, GK ^{[1
]}

机构：

[1] WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 03期

关键词：

D O I：

10.1063/1.90324

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vapor-deposited amorphous silicon films of 4000 Å thickness have been epitaxially crystallized on (100) silicon substrates by pulsed Nd: YAG laser radiation of 125-nsec duration at power levels of 90-120 MW/cm2. The epitaxial layers were found to be defect free when examined by transmission electron microscopy and Rutherford backscattering. Patterned arrays of epitaxial crystal were produced by overlapping individual 39-μm laser pulse spots.

引用

页码：227 / 230

页数：4

共 12 条

[1] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J].