DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON

被引：170

作者：

BEAN, JC ^{[1
]}

BECKER, GE ^{[1
]}

PETROFF, PM ^{[1
]}

SEIDEL, TE ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 03期

关键词：

D O I：

10.1063/1.323706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：907 / 913

页数：7

共 23 条

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