DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON

被引：170

作者：

BEAN, JC ^{[1
]}

BECKER, GE ^{[1
]}

PETROFF, PM ^{[1
]}

SEIDEL, TE ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 03期

关键词：

D O I：

10.1063/1.323706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：907 / 913

页数：7

共 23 条

[11] IMPLANTATION OF ARGON INTO SIO2-FILMS DUE TO BACKSPUTTER CLEANING [J].

KOCH, FB ;

MEEK, RL ;

MCCAUGHAN, DV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (04) :558-562

[12]

LINDHARD J, 1965, KGL DANSKE VIDENSKAB, V34, P1

[13]

MANY A, 1965, SEMICONDUCTOR SURFAC, P95

[14] SURFACE SPECTROSCOPY OF SCHOTTKY-BARRIER FORMATION ON SI(111) 7X7 - PHOTOEMISSION STUDIES OF FILLED SURFACE-STATES AND BAND BENDING [J].

MARGARITONDO, G ;

ROWE, JE ;

CHRISTMAN, SB .

PHYSICAL REVIEW B, 1976, 14 (12) :5396-5403

[15]

MAYER JW, 1970, ION IMPLANTATION SEM, P193

[16] ATTENUATION LENGTHS OF LOW-ENERGY ELECTRONS IN SOLIDS [J].

POWELL, CJ .

SURFACE SCIENCE, 1974, 44 (01) :29-46

[17] INVESTIGATION OF RF SPUTTER ETCHED SILICON SURFACES USING HELIUM ION BACKSCATTER [J].

SACHSE, GW ;

MILLER, WE ;

GROSS, C .

SOLID-STATE ELECTRONICS, 1975, 18 (05) :431-435

[18] DIRECT COMPARISON OF ION-DAMAGE GETTERING AND PHOSPHORUS-DIFFUSION GETTERING OF AU IN SI [J].

SEIDEL, TE ;

MEEK, RL ;

CULLIS, AG .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :600-609

[19] VISIBLE INTERFERENCE EFFECTS IN SILICON CAUSED BY HIGH-CURRENT-HIGH-DOSE IMPLANTATION [J].

SEIDEL, TE ;

PASTEUR, GA ;

TSAI, JCC .

APPLIED PHYSICS LETTERS, 1976, 29 (10) :648-651

[20] SECONDARY DEFECTS IN PHOSPHORUS-IMPLANTED SILICON [J].

TAMURA, M .

APPLIED PHYSICS LETTERS, 1973, 23 (12) :651-653

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