IMPLANTATION OF ARGON INTO SIO2-FILMS DUE TO BACKSPUTTER CLEANING

[1] FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE [J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 901 - &

[2] ION INDUCED REEMISSION OF NOBLE GASES FROM A NICKEL SURFACE [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (11) : 1570 - 1577

[3] ARGON CONTENT IN (III) SILICON FOR SPUTTERING ENERGIES BELOW 200 EV [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (09) : 1197 - &

[4] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[5] JOHNSON WS, 1970, PROJECTED RANGE STAT

[6] JOUFFREY B, 1963, J MICROSCOPIE, V2, P45

[7] KOCH FB, 1970, OCT EL SOC M ATL CIT, P470

[8] KOCH FB, UNPUBLISHED WORK

[9] LOW-ENERGY ION-BOMBARDMENT OF SILICON DIOXIDE FILMS ON SILICON .2. INERT AMBIENT ANNEALING OF DEGRADATION IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3182 - 3190

[10] MCCAUGHAN DV, IN PRESS

[1] FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE [J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 901 - &

[2] ION INDUCED REEMISSION OF NOBLE GASES FROM A NICKEL SURFACE [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (11) : 1570 - 1577

[3] ARGON CONTENT IN (III) SILICON FOR SPUTTERING ENERGIES BELOW 200 EV [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (09) : 1197 - &

[4] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[5] JOHNSON WS, 1970, PROJECTED RANGE STAT

[6] JOUFFREY B, 1963, J MICROSCOPIE, V2, P45

[7] KOCH FB, 1970, OCT EL SOC M ATL CIT, P470

[8] KOCH FB, UNPUBLISHED WORK

[9] LOW-ENERGY ION-BOMBARDMENT OF SILICON DIOXIDE FILMS ON SILICON .2. INERT AMBIENT ANNEALING OF DEGRADATION IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3182 - 3190

[10] MCCAUGHAN DV, IN PRESS