FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE

[1] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1970, 13 (07) : 1011 - +

[2] ANDREWS JM, 1970, PHYSICAL ELECTRONICS

[3] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[4] Hansen M, 1965, CONSTITUTION BINAR S

[5] KOCH FB, 1970, FALL M EL SOC ATL CI

[6] Lepselter M. P., 1969, Ohmic contacts to semiconductors, P159

[7] THE STRUCTURE OF NISI [J]. ACTA CRYSTALLOGRAPHICA, 1951, 4 (05): : 462 - 464

[8] THE STRUCTURE OF NI2SI [J]. ACTA CRYSTALLOGRAPHICA, 1952, 5 (03): : 329 - 331

[1] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1970, 13 (07) : 1011 - +

[2] ANDREWS JM, 1970, PHYSICAL ELECTRONICS

[3] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[4] Hansen M, 1965, CONSTITUTION BINAR S

[5] KOCH FB, 1970, FALL M EL SOC ATL CI

[6] Lepselter M. P., 1969, Ohmic contacts to semiconductors, P159

[7] THE STRUCTURE OF NISI [J]. ACTA CRYSTALLOGRAPHICA, 1951, 4 (05): : 462 - 464

[8] THE STRUCTURE OF NI2SI [J]. ACTA CRYSTALLOGRAPHICA, 1952, 5 (03): : 329 - 331