REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES

被引：276

作者：

ANDREWS, JM

LEPSELTER, MP

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 07期

关键词：

D O I：

10.1016/0038-1101(70)90098-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1011 / +

页数：1

共 18 条

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[3]

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SZE, SM .

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[5] SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES [J].

CROWELL, CR ;

SHORE, HB ;

LABATE, EE .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3843-&

[6] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&

[7] QUANTUM-MECHANICAL REFLECTION OF ELECTRONS AT METAL-SEMICONDUCTOR BARRIERS - ELECTRON TRANSPORT IN SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES [J].

CROWELL, CR ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2683-&

[8] RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1969, 12 (01) :55-&

[9] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[10]

CROWELL CR, 1967, PHYS THIN FILMS, V4, P325

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