LOW-ENERGY ION-BOMBARDMENT OF SILICON DIOXIDE FILMS ON SILICON .2. INERT AMBIENT ANNEALING OF DEGRADATION IN MOS DEVICES

被引：18

作者：

MCCAUGHAN, DV ^{[1
]}

MURPHY, VT ^{[1
]}

机构：

[1] BELL TEL LABS, MURRAY HILL, NJ 07974 USA

来源：

关键词：

D O I：

10.1063/1.1662729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3182 / 3190

页数：9

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[5]

KOCH FB, TO BE PUBLISHED

MCCAUGHAN, DV ;

KUSHNER, RA ;

MURPHY, VT .

[7] LOW-ENERGY ION-BOMBARDMENT EFFECTS IN SIO2 [J].

MCCAUGHAN, DV ;

MURPHY, VT .

[8]

MCCAUGHAN DV, 1971, FAL EL SOC M CLEV

[9]

MCCAUGHAN DV, TO BE PUBLISHED

[10]

MCCAUGHAN DV, 1972, 7 NAT EL MICR C SAN