ARGON CONTENT IN (III) SILICON FOR SPUTTERING ENERGIES BELOW 200 EV

[1] EFFECT OF ENERGY AND INTEGRATED FLUX ON RETENTION AND RANGE OF INERT GAS IONS INJECTED AT KEV ENERGIES IN METALS [J]. CANADIAN JOURNAL OF PHYSICS, 1963, 41 (06) : 844 - &

[2] SPUTTERING YIELDS OF SEVERAL SEMICONDUCTING COMPOUNDS UNDER ARGON ION BOMBARDMENT [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2820 - &

[3] COMAS J, 1968, J ELECTROCHEM SOC, V115, P975

[4] RELEASE PROCESSES IN METAL AND OXIDE TARGETS FOLLOWING BOMBARDMENTS WITH XE AT ENERGIES UP TO 40 KEV [J]. ACTA METALLURGICA, 1965, 13 (03): : 169 - &

[5] THERMAL RELEASE OF INERT GASES FORM A (100) TUNGSTEN SURFACE [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4546 - +

[6] COLORATION OF LIF PRODUCED BY 3.0-MEV 40AR IONS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (10) : 2486 - +

[7] SPUTTERING OF SILICON WITH A+2 IONS [J]. PHYSICAL REVIEW, 1961, 121 (02): : 374 - &

[1] EFFECT OF ENERGY AND INTEGRATED FLUX ON RETENTION AND RANGE OF INERT GAS IONS INJECTED AT KEV ENERGIES IN METALS [J]. CANADIAN JOURNAL OF PHYSICS, 1963, 41 (06) : 844 - &

[2] SPUTTERING YIELDS OF SEVERAL SEMICONDUCTING COMPOUNDS UNDER ARGON ION BOMBARDMENT [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2820 - &

[3] COMAS J, 1968, J ELECTROCHEM SOC, V115, P975

[4] RELEASE PROCESSES IN METAL AND OXIDE TARGETS FOLLOWING BOMBARDMENTS WITH XE AT ENERGIES UP TO 40 KEV [J]. ACTA METALLURGICA, 1965, 13 (03): : 169 - &

[5] THERMAL RELEASE OF INERT GASES FORM A (100) TUNGSTEN SURFACE [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4546 - +

[6] COLORATION OF LIF PRODUCED BY 3.0-MEV 40AR IONS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (10) : 2486 - +

[7] SPUTTERING OF SILICON WITH A+2 IONS [J]. PHYSICAL REVIEW, 1961, 121 (02): : 374 - &