SURFACE SPECTROSCOPY OF SCHOTTKY-BARRIER FORMATION ON SI(111) 7X7 - PHOTOEMISSION STUDIES OF FILLED SURFACE-STATES AND BAND BENDING

被引：159

作者：

MARGARITONDO, G ^{[1
]}

ROWE, JE ^{[1
]}

CHRISTMAN, SB ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1976年 / 14卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.14.5396

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：5396 / 5403

页数：8

相关论文

共 43 条

[1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES
ANDREWS, JM
PHILLIPS, JC
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59
[2] APPELBAUM JA, 1974, 12TH P INT C PHYS SE, P675
[3] X-RAY PHOTOEMISSION FROM ALUMINUM
BAER, Y
BUSCH, G
[J]. PHYSICAL REVIEW LETTERS, 1973, 30 (07) : 280 - 282
[4] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[5] SIMPLIFIED SELF-CONSISTENT MODEL FOR IMAGE FORCE AND INTERFACE CHARGE IN SCHOTTKY BARRIERS
CROWELL, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 951 - 957
[6] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1624 - 1627
[7] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS
EASTMAN, DE
GROBMAN, WD
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1378 - &
[8] EXPERIMENTAL EVIDENCE FOR SURFACE PHOTOELECTRIC EFFECT IN ALUMINUM
ENDRIZ, JG
SPICER, WE
[J]. PHYSICAL REVIEW LETTERS, 1971, 27 (09) : 570 - &
[9] CORRELATION OF METAL-SEMICONDUCTOR BARRIER HEIGHT AND METAL WORK FUNCTION - EFFECTS OF SURFACE STATES
GEPPERT, DV
COWLEY, AM
DORE, BV
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2458 - &
[10] PHOTOEMISSION STUDIES OF GAAS-CS INTERFACE
GREGORY, PE
SPICER, WE
[J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2370 - 2381

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