RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS

被引:157
作者
EASTMAN, DE [1 ]
FREEOUF, JL [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1103/PhysRevLett.34.1624
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1624 / 1627
页数:4
相关论文
共 19 条
[1]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[2]   OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J].
CHIAROTTI, G ;
NANNARONE, S ;
PASTORE, R ;
CHIARADIA, P .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10) :3398-+
[3]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[4]   SIMPLIFIED SELF-CONSISTENT MODEL FOR IMAGE FORCE AND INTERFACE CHARGE IN SCHOTTKY BARRIERS [J].
CROWELL, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :951-957
[5]  
EASTMAN D, UNPUBLISHED
[6]   PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].
EASTMAN, DE ;
FREEOUF, JL .
PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1601-1605
[7]  
GREGORY P, 1975, B AM PHYS SOC, V20, P425
[8]   SURFACE STATE BAND ON GAAS (110) FACE [J].
GREGORY, PE ;
SPICER, WE ;
CIRACI, S ;
HARRISON, WA .
APPLIED PHYSICS LETTERS, 1974, 25 (09) :511-514
[9]   THEORY OF SURFACE STATES [J].
HEINE, V .
PHYSICAL REVIEW, 1965, 138 (6A) :1689-&
[10]   SCHOTTKY BARRIERS AND PLASMONS [J].
INKSON, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :943-946