PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110)

被引：166

作者：

EASTMAN, DE ^{[1
]}

FREEOUF, JL ^{[1
]}

机构：

[1] IBM CORP,RES CTR,YORKTOWN HEIGHTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1974年 / 33卷 / 27期

关键词：

D O I：

10.1103/PhysRevLett.33.1601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1601 / 1605

页数：5

共 15 条

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[4]

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[6] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

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[10] ELECTRON ENERGY-LOSS SPECTROSCOPY OF GAAS AND GE SURFACES [J].

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