ELECTRON ENERGY-LOSS SPECTROSCOPY OF GAAS AND GE SURFACES

被引：152

作者：

LUDEKE, R ^{[1
]}

ESAKI, L ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1974年 / 33卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.33.653

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：653 / 656

页数：4

相关论文

共 11 条

[1] INELASTIC SCATTERING OF SLOW ELECTRONS IN SOLIDS
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[2] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
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[3] ELECTRONIC-STRUCTURE OF GAAS
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[J]. PHYSICAL REVIEW LETTERS, 1974, 32 (12) : 674 - 677
[4] SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS
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[J]. SOLID-STATE ELECTRONICS, 1971, 14 (02) : 125 - &
[5] EASTMAN DE, PRIVATE COMMUNICATIO
[6] ELECTRONIC-TRANSITIONS OF OXYGEN ADSORBED ON CLEAN SILICON (111) AND (100) SURFACES
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[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1951 - 1957
[7] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY
LEY, L
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SHIRLEY, DA
[J]. PHYSICAL REVIEW B, 1974, 9 (02): : 600 - 621
[8] GA1-XALXAS SUPERLATTICES PROFILED BY AUGER-ELECTRON SPECTROSCOPY
LUDEKE, R
ESAKI, L
CHANG, LL
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (09) : 417 - 419
[9] LUDEKE R, TO BE PUBLISHED
[10] SURFACE-STATE TRANSITIONS OF SILICON IN ELECTRON ENERGY-LOSS SPECTRA
ROWE, JE
IBACH, H
[J]. PHYSICAL REVIEW LETTERS, 1973, 31 (02) : 102 - 105