SURFACE-STATE TRANSITIONS OF SILICON IN ELECTRON ENERGY-LOSS SPECTRA

被引：263

作者：

ROWE, JE ^{[1
]}

IBACH, H ^{[1
]}

机构：

[1] BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1973年 / 31卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.31.102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：102 / 105

页数：4

相关论文

共 18 条

[1] APPELBAUM JA, 1973, PHYS REV LETT, V30, P106
[2] INELASTIC SCATTERING OF SLOW ELECTRONS IN SOLIDS
BAUER, E
[J]. ZEITSCHRIFT FUR PHYSIK, 1969, 224 (1-3): : 19 - &
[3] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS
EASTMAN, DE
GROBMAN, WD
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1378 - &
[4] RELATIONSHIP BETWEEN ATOMIC STRUCTURE AND ELECTRONIC PROPERTIES OF (111) SURFACES OF SILICON
ERBUDAK, M
FISCHER, TE
[J]. PHYSICAL REVIEW LETTERS, 1972, 29 (11) : 732 - &
[5] PHOTOEMISSION VALENCE-BAND DENSITIES OF STATES FOR SI, GE, AND GAAS USING SYNCHROTRON RADIATION
GROBMAN, WD
EASTMAN, DE
[J]. PHYSICAL REVIEW LETTERS, 1972, 29 (22) : 1508 - &
[6] IBACH H, TO BE PUBLISHED
[7] OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION
JONA, F
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (5-6) : 375 - &
[8] BAND STRUCTURE OF SILICON FROM AN ADJUSTED HEINE-ABARENKOV CALCULATION
KANE, EO
[J]. PHYSICAL REVIEW, 1966, 146 (02): : 558 - +
[9] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES
LANDER, JJ
GOBELL, GW
MORRISON, J
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) : 2298 - +
[10] X-RAY PHOTOEMISSION SPECTRA OF CRYSTALLINE AND AMORPHOUS SI AND GE VALENCE BANDS
LEY, L
SHIRLEY, DA
POLLAK, R
KOWALCZYK, S
[J]. PHYSICAL REVIEW LETTERS, 1972, 29 (16) : 1088 - +