OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION

被引：210

作者：

JONA, F

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1965年 / 9卷 / 5-6期

关键词：

D O I：

10.1147/rd.95.0375

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：375 / &

共 23 条

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[8] PREPARATION OF ATOMICALLY CLEAN SURFACES OF SI AND GE BY HEATING IN VACUUM [J].

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[9] SURFACE REACTIONS OF SILICON (3) WITH ALUMINUM AND INDIUM [J].

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[10] STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1. [J].

LANDER, JJ ;

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