PREPARATION OF ATOMICALLY CLEAN SURFACES OF SI AND GE BY HEATING IN VACUUM

被引：37

作者：

JONA, F

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来源：

APPLIED PHYSICS LETTERS | 1965年 / 6卷 / 10期

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D O I：

10.1063/1.1754133

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：205 / &

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[1] CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM
ALLEN, FG
EISINGER, J
HAGSTRUM, HD
LAW, JT
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1563 - 1571
[2] VARIATION OF CONTACT POTENTIAL WITH CRYSTAL FACE FOR GERMANIUM
ALLEN, FG
FOWLER, AB
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 3 (1-2) : 107 - 114
[3] ION BOMBARDMENT-CLEANING OF GERMANIUM AND TITANIUM AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION
FARNSWORTH, HE
SCHLIER, RE
GEORGE, TH
BURGER, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) : 252 - 253
[4] GREGOR L, TO BE PUBLISHED
[5] STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1.
LANDER, JJ
MORRISON, J
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1403 - &
[6] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES
LANDER, JJ
MORRISON, J
[J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) : 729 - &
[7] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES
LANDER, JJ
GOBELL, GW
MORRISON, J
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) : 2298 - +
[8] SCATTERING FACTORS AND OTHER PROPERTIES OF LOW-ENERGY ELECTRON DIFFRACTION
LANDER, JJ
MORRISON, J
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) : 3517 - &
[9] LOW-ENERGY ELECTRON-DIFFRACTION STUDY OF SURFACE REACTIONS OF GERMANIUM WITH OXYGEN AND WITH IODINE .2.
LANDER, JJ
MORRISON, J
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1411 - &
[10] THE ADSORPTION OF GASES ON A GERMANIUM SURFACE
LAW, JT
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1955, 59 (06) : 543 - 549