PHOTOEMISSION VALENCE-BAND DENSITIES OF STATES FOR SI, GE, AND GAAS USING SYNCHROTRON RADIATION

被引：138

作者：

GROBMAN, WD

EASTMAN, DE

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.29.1508

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1508 / &

共 14 条

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[10] CALCULATION OF PHOTOELECTRIC EFFECT IN SILICON
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (05) : 1075 - +