SURFACE STATE BAND ON GAAS (110) FACE

[1] APPELBAUM JA, 1973, APPL PHYS LETT, V31, P106

[2] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1788 - +

[3] ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES [J]. SURFACE SCIENCE, 1971, 26 (02) : 587 - &

[4] EASTMAN D, 1972, APPL PHYS LETT, V29, P5208

[5] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1378 - &

[6] EASTMAN DE, PRIVATE COMMUNICATIO

[7] EDEN RC, 1967, THESIS STANFORD U

[8] BOND-ORBITAL MODEL AND PROPERTIES OF TETRAHEDRALLY COORDINATED SOLIDS [J]. PHYSICAL REVIEW B, 1973, 8 (10): : 4487 - 4498

[9] Herman F., 1963, ATOMIC STRUCTURE CAL

[10] INTRINSIC SURFACE STATES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1968, 20 (18) : 992 - &

[1] APPELBAUM JA, 1973, APPL PHYS LETT, V31, P106

[2] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1788 - +

[3] ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES [J]. SURFACE SCIENCE, 1971, 26 (02) : 587 - &

[4] EASTMAN D, 1972, APPL PHYS LETT, V29, P5208

[5] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1378 - &

[6] EASTMAN DE, PRIVATE COMMUNICATIO

[7] EDEN RC, 1967, THESIS STANFORD U

[8] BOND-ORBITAL MODEL AND PROPERTIES OF TETRAHEDRALLY COORDINATED SOLIDS [J]. PHYSICAL REVIEW B, 1973, 8 (10): : 4487 - 4498

[9] Herman F., 1963, ATOMIC STRUCTURE CAL

[10] INTRINSIC SURFACE STATES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1968, 20 (18) : 992 - &