ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY

被引：135

作者：

BECKER, GE ^{[1
]}

BEAN, JC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 08期

关键词：

D O I：

10.1063/1.324181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3395 / 3399

页数：5

共 26 条

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[9]

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