ANTIMONY CONCENTRATION IN SILICON EPITAXIAL LAYER FORMED BY PARTIALLY IONIZED VAPOR-DEPOSITION

被引：31

作者：

ITOH, T ^{[1
]}

NAKAMURA, T ^{[1
]}

MUROMACHI, M ^{[1
]}

SUGIYAMA, T ^{[1
]}

机构：

[1] WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.15.1145

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1145 / 1146

页数：2

共 8 条

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[7] FUNDAMENTALS OF ION PLATING
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[8] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1