LASER ANNEALING OF DIFFUSION-INDUCED IMPERFECTIONS IN SILICON

[1] CONCENTRATION-DEPENDENT DIFFUSION OF B AND P IN SI [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) : 2437 - 2439

[2] LINDMAYER J, 1972, 9TH IEEE PHOT SPEC C, P66

[3] CONTROL OF DIFFUSION INDUCED DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON [J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 807 - +

[4] SILICON PHOSPHIDE PRECIPITATES IN DIFFUSED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (10) : 1188 - 1189

[5] WANG JHS, UNPUBLISHED

[6] YOSHI ML, 1965, J ELECTROCHEM SOC, V112, P185

[1] CONCENTRATION-DEPENDENT DIFFUSION OF B AND P IN SI [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) : 2437 - 2439

[2] LINDMAYER J, 1972, 9TH IEEE PHOT SPEC C, P66

[3] CONTROL OF DIFFUSION INDUCED DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON [J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 807 - +

[4] SILICON PHOSPHIDE PRECIPITATES IN DIFFUSED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (10) : 1188 - 1189

[5] WANG JHS, UNPUBLISHED

[6] YOSHI ML, 1965, J ELECTROCHEM SOC, V112, P185