CONCENTRATION-DEPENDENT DIFFUSION OF B AND P IN SI

被引：23

作者：

JAIN, RK ^{[1
]}

VANOVERS.R ^{[1
]}

机构：

[1] INST ELEKTROTECH KARDINAAL MERCIERLAAN,LAB FYS & ELEKTR HALFGELEIDERS,HEVERLEE 3030,BELGIUM

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 05期

关键词：

D O I：

10.1063/1.1662589

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2437 / 2439

页数：3

共 11 条

[1] EFFECT OF CONCENTRATION-DEPENDENT DIFFUSION-COEFFICIENTS ON PRECIPITATE GROWTH KINETICS [J].

BROWN, LC .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) :4443-&

[2] DISCUSSION ON ANOMALOUS DIFFUSION IN SILICON [J].

JAIN, RK ;

VANOVERS.RJ .

SOLID-STATE ELECTRONICS, 1973, 16 (02) :284-287

[3] DIFFUSION-INDUCED IMPERFECTIONS IN SILICON [J].

JOSHI, ML ;

WILHELM, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) :185-&

[4] LATTICE CONTRACTION COEFFICIENT OF BORON AND PHOSPHORUS IN SILICON [J].

MCQUHAE, KG ;

BROWN, AS .

SOLID-STATE ELECTRONICS, 1972, 15 (03) :259-&

[5] SILICON PHOSPHIDE PRECIPITATES IN DIFFUSED SILICON [J].

SCHMIDT, PF ;

STICKLER, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (10) :1188-1189

[6]

SHAW D, 1965, BRIT J APPL PHYS, V17, P999

[7] FIELD-ENHANCED DONOR DIFFUSION IN DEGENERATE SEMICONDUCTOR LAYERS [J].

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1402-&

[8] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J].

TANNENBAUM, E .

SOLID-STATE ELECTRONICS, 1961, 2 (2-3) :123-132

[9] CONCENTRATION-DEPENDENT DIFFUSION OF BORON AND PHOSPHORUS IN SILICON [J].

THAI, ND .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :2859-&

[10] ANOMALOUS DIFFUSION IN SEMICONDUCTORS - A QUANTITATIVE ANALYSIS [J].

THAI, ND .

SOLID-STATE ELECTRONICS, 1970, 13 (02) :165-&

← 1 2 →