SILICON PHOSPHIDE PRECIPITATES IN DIFFUSED SILICON

[1] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &

[2] GIESSEN B, 1959, Z METALLKD, V50, P274

[3] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[4] KOOI E, 1963, RECENT NEWS PAPER EL

[5] PHILLIPS TG, UNPUB

[6] Schmidt P., UNPUB

[7] ANODIC OXIDE FILMS FOR DEVICE FABRICATION IN SILICON .1. THE CONTROL LED INCORPORATION OF PHOSPHORUS INTO ANODIC OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (06) : 682 - 688

[8] KRISTALLCHEMISCHE ERGEBNISSE AN PHASEN AUS B-ELEMENTEN [J]. NATURWISSENSCHAFTEN, 1954, 41 (19) : 448 - 448

[1] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &

[2] GIESSEN B, 1959, Z METALLKD, V50, P274

[3] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[4] KOOI E, 1963, RECENT NEWS PAPER EL

[5] PHILLIPS TG, UNPUB

[6] Schmidt P., UNPUB

[7] ANODIC OXIDE FILMS FOR DEVICE FABRICATION IN SILICON .1. THE CONTROL LED INCORPORATION OF PHOSPHORUS INTO ANODIC OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (06) : 682 - 688

[8] KRISTALLCHEMISCHE ERGEBNISSE AN PHASEN AUS B-ELEMENTEN [J]. NATURWISSENSCHAFTEN, 1954, 41 (19) : 448 - 448