DISCUSSION ON ANOMALOUS DIFFUSION IN SILICON

被引：3

作者：

JAIN, RK ^{[1
]}

VANOVERS.RJ ^{[1
]}

机构：

[1] KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,LAB FYS & ELEKTR HALFGELEIDERS,HEVERLEE 3030,BELGIUM

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 02期

关键词：

D O I：

10.1016/0038-1101(73)90041-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：284 / 287

页数：4

共 14 条

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[8]

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[10] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J].

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