DIFFUDION-INDUCED STRESS AND LATTICE DISORDERS IN SILICON

被引：63

作者：

LAWRENCE, JE

机构：

来源：

关键词：

D O I：

10.1149/1.2424127

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：819 / &

共 18 条

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