IMPERFECTIONS IN SILICON INDUCED BY DIFFUSION OF IMPURITIES

被引：13

作者：

INO, H

KAWAMURA, T

YASUFUKU, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1964年 / 3卷 / 11期

关键词：

D O I：

10.1143/JJAP.3.692

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：692 / &

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共 6 条

[1] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON
BACKENSTOSS, G
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710
[2] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON
DASH, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1193 - 1195
[3] PAULING L, 1940, NATURE CHEM BOND, P164
[4] SLIP PATTERNS ON BORON-DOPED SILICON SURFACES
QUEISSER, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1776 - &
[5] X-RAY OBSERVATIONS OF DIFFUSION-INDUCED DISLOCATIONS IN SILICON
SCHWUTTKE, GH
QUEISSER, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (04) : 1540 - &
[6] SIRTL E, 1961, Z METALLKD, V52, P529