X-RAY OBSERVATIONS OF DIFFUSION-INDUCED DISLOCATIONS IN SILICON

[1] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710

[2] DASARO LA, 1960, SOLID STATE ELECTRON, V7, P1

[3] HORNSTRA J, 1958, J PHYS CHEM SOLIDS, V5, P179

[4] STUDIES OF INDIVIDUAL DISLOCATIONS IN CRYSTALS BY X-RAY DIFFRACTION MICRORADIOGRAPHY [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) : 1748 - 1755

[5] LANG AR, 1958, J APPL PHYS, V29

[6] Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[7] PRUSSIN S, 1961, SEMICONDUCTOR S ELEC

[8] SLIP PATTERNS ON BORON-DOPED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1776 - &

[9] X-RAY DIFFRACTION MICROSCOPY STUDY OF IMPERFECTIONS IN SILICON SINGLE CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) : 27 - 32

[1] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710

[2] DASARO LA, 1960, SOLID STATE ELECTRON, V7, P1

[3] HORNSTRA J, 1958, J PHYS CHEM SOLIDS, V5, P179

[4] STUDIES OF INDIVIDUAL DISLOCATIONS IN CRYSTALS BY X-RAY DIFFRACTION MICRORADIOGRAPHY [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) : 1748 - 1755

[5] LANG AR, 1958, J APPL PHYS, V29

[6] Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[7] PRUSSIN S, 1961, SEMICONDUCTOR S ELEC

[8] SLIP PATTERNS ON BORON-DOPED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1776 - &

[9] X-RAY DIFFRACTION MICROSCOPY STUDY OF IMPERFECTIONS IN SILICON SINGLE CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) : 27 - 32