ANOMALOUS DIFFUSION IN SEMICONDUCTORS - A QUANTITATIVE ANALYSIS

被引：40

作者：

THAI, ND

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 02期

关键词：

D O I：

10.1016/0038-1101(70)90047-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：165 / &

共 35 条

[1]

ALTSHULLER VM, 1967, SOV PHYS-SOLID STATE, V9, P648

[2] X-RAY MEASUREMENT OF ELASTIC STRAIN AND LATTICE CONSTANT OF DIFFUSED SILICON [J].

COHEN, BG .

SOLID-STATE ELECTRONICS, 1967, 10 (01) :33-&

[3]

Friedel J., 1964, DISLOCATIONS

[4] LOCALIZED ENHANCED DIFFUSION IN NPN SILICON TRANSISTORS - (EMITTER DIP EFFECT VACANCY MODEL X-RAY MICROSCOPY E/T) [J].

GERETH, R ;

SCHWUTTKE, GH .

APPLIED PHYSICS LETTERS, 1966, 8 (03) :55-+

[5] LOCALIZED ENHANCED DIFFUSION IN NPN SILICON STRUCTURES [J].

GERETH, R ;

VANLOON, PGG ;

WILLIAMS, V .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :323-+

[6] DIFFUSANT IMPURITY-CONCENTRATION PROFILES IN THIN LAYERS ON SILICON [J].

ILES, PA ;

LEIBENHAUT, B .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :331-&

[7] DISLOCATION-INDUCED DEVIATION OF PHOSPHORUS-DIFFUSION PROFILES IN SILICON [J].

JOSHI, ML ;

DASH, S .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (06) :446-&

[8]

KUHLMANNWILSDOR.D, 1962, T METALL SOC AIME, V224, P1047

[9] SOLUTE DIFFUSION IN PLASTICALLY DEFORMED SILICON CRYSTALS [J].

LAWRENCE, JE .

BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (04) :405-&

[10] COOPERATIVE DIFFUSION EFFECT [J].

LAWRENCE, JE .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4106-+

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