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ANOMALOUS DIFFUSION IN SEMICONDUCTORS - A QUANTITATIVE ANALYSIS

被引：40
作者：
THAI, ND
机构：
来源：
SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 02期
关键词：
D O I：
10.1016/0038-1101(70)90047-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：165 / &
相关论文
共 35 条
[31]   DISLOCATION MOTION IN SILICON CRYSTALS AS MEASURED BY LANG X-RAY TECHNIQUE [J].
SUZUKI, T ;
KOJIMA, H .
ACTA METALLURGICA, 1966, 14 (08) :913-&
[32]   THEORETICAL CALCULATIONS OF THE ENTHALPIES AND ENTROPIES OF DIFFUSION AND VACANCY FORMATION IN SEMICONDUCTORS [J].
SWALIN, RA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 18 (04) :290-296
[33]   MECHANICAL PROPERTIES OF SINGLE CRYSTALS OF SILICON [J].
SYLWESTROWICZ, W .
PHILOSOPHICAL MAGAZINE, 1962, 7 (83) :1825-&
[34]   DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J].
TANNENBAUM, E .
SOLID-STATE ELECTRONICS, 1961, 2 (2-3) :123-132
[35]   SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].
TRUMBORE, FA .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233
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