LOCALIZED ENHANCED DIFFUSION IN NPN SILICON STRUCTURES

[1] MOLYBDENUM MASKING OF ION BOMBARDMENT DOPING OF SILICON [J]. SOLID-STATE ELECTRONICS, 1964, 7 (06) : 487 - 487

[2] AMADEI L, PRIVATE COMMUNICATIO

[3] VACANCY ENHANCED DIFFUSION IN SILICON - EFFECTS OF IRRADIATION AND OF CHEMICAL IMPURITIES [J]. DISCUSSIONS OF THE FARADAY SOCIETY, 1961, (31): : 76 - &

[4] FISHER J, 1957, DISLOCATIONS MECHANI, P581

[5] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[6] GATOS H, 1960, PROPERTIES ELEMEN ED, P321

[7] HANNAY NB, 1956, SEMICONDUCTORS, P222

[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[9] KEONJIAN E, 1963, MICROELECTRONICS, P262

[10] IONIZATION INTERACTION BETWEEN IMPURITIES IN SEMICONDUCTORS AND INSULATORS [J]. PHYSICAL REVIEW, 1956, 102 (04): : 992 - 999

[1] MOLYBDENUM MASKING OF ION BOMBARDMENT DOPING OF SILICON [J]. SOLID-STATE ELECTRONICS, 1964, 7 (06) : 487 - 487

[2] AMADEI L, PRIVATE COMMUNICATIO

[3] VACANCY ENHANCED DIFFUSION IN SILICON - EFFECTS OF IRRADIATION AND OF CHEMICAL IMPURITIES [J]. DISCUSSIONS OF THE FARADAY SOCIETY, 1961, (31): : 76 - &

[4] FISHER J, 1957, DISLOCATIONS MECHANI, P581

[5] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[6] GATOS H, 1960, PROPERTIES ELEMEN ED, P321

[7] HANNAY NB, 1956, SEMICONDUCTORS, P222

[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[9] KEONJIAN E, 1963, MICROELECTRONICS, P262

[10] IONIZATION INTERACTION BETWEEN IMPURITIES IN SEMICONDUCTORS AND INSULATORS [J]. PHYSICAL REVIEW, 1956, 102 (04): : 992 - 999