LOCALIZED ENHANCED DIFFUSION IN NPN SILICON TRANSISTORS - (EMITTER DIP EFFECT VACANCY MODEL X-RAY MICROSCOPY E/T)

被引：16

作者：

GERETH, R

SCHWUTTKE, GH

机构：

来源：

关键词：

D O I：

10.1063/1.1754480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：55 / +

页数：1

共 17 条

BARUCH, P ;

SAINTESPRIT, R ;

CONSTANTINESCU, C ;

PFISTER, JC .

DISCUSSIONS OF THE FARADAY SOCIETY, 1961, (31) :76-&

[2]

GATOS H, 1960, PROPERTIES ELEMEN ED, P321

[3] LOCALIZED ENHANCED DIFFUSION IN NPN SILICON STRUCTURES [J].

GERETH, R ;

VANLOON, PGG ;

WILLIAMS, V .

[4]

GIESSEN B, 1959, Z METALLKD, V50, P274

[5]

KEONJIAN E, 1963, MICROELECTRONICS, P262

KOOI, E .

[7]

KOOI E, 1963, APR EL SOC M PITTSB

[8]

LEVINE E, UNPUBLISHED WORK

[9]

LUCE RL, 1965, OCT INT EL DEV M WAS

[10]

MILLER LE, 1960, PROPERTIES ELEMENTAL, P321