DIFFUSANT IMPURITY-CONCENTRATION PROFILES IN THIN LAYERS ON SILICON

被引：31

作者：

ILES, PA

LEIBENHAUT, B

机构：

来源：

SOLID-STATE ELECTRONICS | 1962年 / 5卷 / SEP-O期

关键词：

D O I：

10.1016/0038-1101(62)90114-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：331 / &

共 32 条

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