MICROMETER-GATE MESFETS ON LASER-ANNEALED POLYSILICON

[1] BARNARD J, 1979 P INT EL DEV M, P281

[2] ELECTRON-MOBILITY IN SOS FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 913 - 916

[3] KAMINS TI, UNPUBLISHED

[4] SILICON-ON-INSULATOR MOSFETS FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO2 [J]. ELECTRONICS LETTERS, 1979, 15 (14) : 435 - 437

[5] PHYSICAL BASIS OF SHORT-CHANNEL MESFET OPERATION [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 398 - 412

[1] BARNARD J, 1979 P INT EL DEV M, P281

[2] ELECTRON-MOBILITY IN SOS FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 913 - 916

[3] KAMINS TI, UNPUBLISHED

[4] SILICON-ON-INSULATOR MOSFETS FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO2 [J]. ELECTRONICS LETTERS, 1979, 15 (14) : 435 - 437

[5] PHYSICAL BASIS OF SHORT-CHANNEL MESFET OPERATION [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 398 - 412