LATERAL EPITAXIAL-GROWTH IN POLY-SI FILM OVER SIO2 FROM SINGLE-SI SEED BY SCANNING CW AR LASER ANNEALING

被引：21

作者：

SAKURAI, J

KAWAMURA, S

MORI, H

NAKANO, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 03期

关键词：

D O I：

10.1143/JJAP.20.L176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L176 / L178

页数：3

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共 6 条

[1] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES
GAT, A
GERZBERG, L
GIBBONS, JF
MAGEE, TJ
PENG, J
HONG, JD
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778
[2] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION
GEIS, MW
FLANDERS, DC
SMITH, HI
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 71 - 74
[3] CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES
GIBBONS, JF
LEE, KF
MAGEE, TJ
PENG, J
ORMOND, R
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 831 - 833
[4] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON
LEE, KF
GIBBONS, JF
SARASWAT, KC
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175
[5] SI BRIDGING EPITAXY FROM SI WINDOWS ONTO SIO2 BY Q-SWITCHED RUBY-LASER PULSE ANNEALING
TAMURA, M
TAMURA, H
TOKUYAMA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : L23 - L26
[6] SILICON-ON-INSULATOR MOSFETS FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO2
TASCH, AF
HOLLOWAY, TC
LEE, KF
GIBBONS, JF
[J]. ELECTRONICS LETTERS, 1979, 15 (14) : 435 - 437