DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE

[1] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 59 - 61

[2] BOZLER CO, 1979, TECH DIG INT ELECTRO

[3] CHARACTERIZATION OF EPITAXIAL METAL SILICIDE FILMS GROWN ON SILICON [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 711 - 717

[4] CHANNELING AND BACKSCATTERING STUDIES OF THE CRYSTALLINE PERFECTION AND THE THERMAL-STABILITY OF EPITAXIAL PTSI FILMS ON SI [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5302 - 5306

[5] ISHIWARA H, P S THIN FILM INTERF

[6] SOLID-PHASE EPITAXY IN SILICIDE-FORMING SYSTEMS [J]. THIN SOLID FILMS, 1977, 47 (03) : 313 - 322

[7] HETEROSTRUCTURE BY SOLID-PHASE EPITAXY IN SI(111)-PD-SI(AMORPHOUS) SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 917 - 919

[8] SILICON EPITAXY BY SOLID-PHASE CRYSTALLIZATION OF DEPOSITED AMORPHOUS FILMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (10) : 689 - 691

[9] Sze S.M, 1969, PHYS SEMICONDUCTOR D, P587

[1] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 59 - 61

[2] BOZLER CO, 1979, TECH DIG INT ELECTRO

[3] CHARACTERIZATION OF EPITAXIAL METAL SILICIDE FILMS GROWN ON SILICON [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 711 - 717

[4] CHANNELING AND BACKSCATTERING STUDIES OF THE CRYSTALLINE PERFECTION AND THE THERMAL-STABILITY OF EPITAXIAL PTSI FILMS ON SI [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5302 - 5306

[5] ISHIWARA H, P S THIN FILM INTERF

[6] SOLID-PHASE EPITAXY IN SILICIDE-FORMING SYSTEMS [J]. THIN SOLID FILMS, 1977, 47 (03) : 313 - 322

[7] HETEROSTRUCTURE BY SOLID-PHASE EPITAXY IN SI(111)-PD-SI(AMORPHOUS) SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 917 - 919

[8] SILICON EPITAXY BY SOLID-PHASE CRYSTALLIZATION OF DEPOSITED AMORPHOUS FILMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (10) : 689 - 691

[9] Sze S.M, 1969, PHYS SEMICONDUCTOR D, P587