HETEROSTRUCTURE BY SOLID-PHASE EPITAXY IN SI(111)-PD-SI(AMORPHOUS) SYSTEM

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[3] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2831 - 2836

[4] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J]. THIN SOLID FILMS, 1973, 17 (01) : 1 - 41

[5] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363

[6] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (06) : 507 - +

[7] ANTIMONY DOPING OF SI LAYERS GROWN BY SOLID-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (03) : 148 - 150

[8] INVESTIGATION OF STRUCTURE OF PD2SI FORMED ON SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (11) : 1538 - 1540

[9] ALLOYING OF THIN PALLADIUM FILMS WITH SINGLE-CRYSTAL AND AMORPHOUS SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (02): : 645 - 651

[10] KINETICS OF INITIAL-STAGE OF SI TRANSPORT THROUGH PD-SILICIDE FOR EPITAXIAL-GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1696 - 1699

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[3] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2831 - 2836

[4] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J]. THIN SOLID FILMS, 1973, 17 (01) : 1 - 41

[5] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363

[6] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (06) : 507 - +

[7] ANTIMONY DOPING OF SI LAYERS GROWN BY SOLID-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (03) : 148 - 150

[8] INVESTIGATION OF STRUCTURE OF PD2SI FORMED ON SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (11) : 1538 - 1540

[9] ALLOYING OF THIN PALLADIUM FILMS WITH SINGLE-CRYSTAL AND AMORPHOUS SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (02): : 645 - 651

[10] KINETICS OF INITIAL-STAGE OF SI TRANSPORT THROUGH PD-SILICIDE FOR EPITAXIAL-GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1696 - 1699