ANTIMONY DOPING OF SI LAYERS GROWN BY SOLID-PHASE EPITAXY

被引：10

作者：

LAU, SS

CANALI, C

LIAU, ZL

NAKAMURA, K

NICOLET, MA

MAYER, JW

BLATTNER, RJ

EVANS, CA

机构：

[1] CALTECH,PASADENA,CA 91125

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 03期

关键词：

D O I：

10.1063/1.88670

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：148 / 150

页数：3

相关论文

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