CRYSTALLIZATION OF GE AND SI IN METAL-FILMS .1.

被引：88

作者：

OTTAVIAN.G ^{[1
]}

SIGURD, D ^{[1
]}

MARRELLO, V ^{[1
]}

MAYER, JW ^{[1
]}

MCCALDIN, JO ^{[1
]}

机构：

[1] CALTECH, PASADENA, CA 91109 USA

来源：

关键词：

D O I：

10.1063/1.1663483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1730 / 1739

页数：10

共 22 条

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[5] DONOVAN TM, 1970, THESIS STANFORD U
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[7] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES
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[8] CRYSTALLIZATION AND DECOMPOSITION OF AMORPHOUS ALUMINUM-GERMANIUM FILMS
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[9] EFFECTS OF AL FILMS ON ION-IMPLANTED SI
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[J]. APPLIED PHYSICS LETTERS, 1972, 20 (02) : 73 - &
[10] SOLID-PHASE EPITAXIAL-GROWTH OF GE LAYERS
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 13 (02): : 531 - &