KINETICS OF INITIAL-STAGE OF SI TRANSPORT THROUGH PD-SILICIDE FOR EPITAXIAL-GROWTH

被引：12

作者：

LIAU, ZL ^{[1
]}

CAMPISANO, SU ^{[1
]}

CANALI, C ^{[1
]}

LAU, SS ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 12期

关键词：

D O I：

10.1149/1.2134112

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1696 / 1699

页数：4

共 9 条

[1]

BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS [J].

CANALI, C ;

CAMPISANO, SU ;

LAU, SS ;

LIAU, ZL ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2831-2836

[3] SOLID-PHASE TRANSPORT AND EPITAXIAL-GROWTH OF GE AND SI [J].

CANALI, C ;

MAYER, JW ;

OTTAVIANI, G ;

SIGURD, D ;

VANDERWE.W .

APPLIED PHYSICS LETTERS, 1974, 25 (01) :3-5

[4] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J].

CHU, WK ;

MAYER, JW ;

NICOLET, MA ;

BUCK, TM ;

AMSEL, G ;

EISEN, F .

THIN SOLID FILMS, 1973, 17 (01) :1-41

[5]

KERN W, 1970, RCA REV, V31, P187

[6]

NAKAMURA K, TO BE PUBLISHED

[7] CRYSTALLIZATION OF GE AND SI IN METAL-FILMS .1. [J].

OTTAVIAN.G ;

SIGURD, D ;

MARRELLO, V ;

MAYER, JW ;

MCCALDIN, JO .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1730-1739

[8] CRYSTALLIZATION OF GE AND SI IN METAL-FILMS .2. [J].

SIGURD, D ;

OTTAVIAN.G ;

ARNAL, HJ ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1740-1745

[9]

Ziegler J. F., 1974, Atomic Data and Nuclear Data Tables, V13, P463, DOI 10.1016/0092-640X(74)90009-6

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