EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS

被引：61

作者：

BEAN, JC

POATE, JM

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 01期

关键词：

D O I：

10.1063/1.91316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：59 / 61

页数：3

共 12 条

[1]

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[4] HIGH-RESOLUTION ELECTRON MICROSCOPE OBSERVATION OF VOIDS IN AMORPHOUS GE [J].

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GALEENER, FL .

PHYSICAL REVIEW LETTERS, 1971, 27 (25) :1716-&

[6] ELECTRICAL AND STRUCTURAL-PROPERTIES OF AMORPHOUS GERMANIUM [J].

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STAUDINGER, A .

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[7]

LAU SS, 1978, THIN FILMS INTERDIFF

[8] EVIDENCE OF VOIDS WITHIN AS-DEPOSITED STRUCTURE OF GLASSY SILICON [J].

MOSS, SC ;

GRACZYK, JF .

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[9]

PHILLIPS JC, 1979, PHYS REV LETT, V42, P115

[10] EFFECT OF ADSORBED GASES ON CONDUCTANCE OF AMORPHOUS FILMS OF SEMICONDUCTING SILICON-HYDROGEN ALLOYS [J].

TANIELIAN, M ;

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APPLIED PHYSICS LETTERS, 1978, 33 (04) :353-356

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