EVIDENCE OF VOIDS WITHIN AS-DEPOSITED STRUCTURE OF GLASSY SILICON

被引:298
作者
MOSS, SC
GRACZYK, JF
机构
[1] Department of Metallurgy and Materials Science, Massachusetts Institute of Technology, Cambridge
关键词
D O I
10.1103/PhysRevLett.23.1167
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present electron diffraction data from amorphous silicon which cannot be reconciled with the intensity profiles derived from small-crystallite models based on the diamond structure. Our diffraction patterns do reveal a pronounced low-angle scattering which anneals out on progressive heating and is indicative of actual void spaces, or regions of distinctly deficient density, in the films. These regions may be responsible for the recent observations of Brodsky and Title on surface states within the bulk of amorphous Si. © 1969 The American Physical Society.
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页码:1167 / &
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