SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：129

作者：

BEAN, JC

POATE, JM

机构：

来源：

关键词：

D O I：

10.1063/1.92007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：643 / 646

页数：4

共 10 条

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[3] OPERATION OF A CRYOPUMPED UHV SYSTEM
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[4] INTERFACIAL ORDER IN EPITAXIAL NISI2
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[J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 544 - 547
[5] CHIU KW, UNPUBLISHED
[6] CHO AY, 1975, PROGR SOLID STATE CH, pCH10
[7] STRUCTURE MODELING OF METAL-SILICIDE LAYERS BY USING AXIAL AND PLANAR CHANNELING TECHNIQUES
ISHIWARA, H
NAGATOMO, M
FURUKAWA, S
[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 417 - 420
[8] LAU SS, 1978, THIN FILMS INTERDIFF, pCH12
[9] MATHEWS JW, 1975, EPITAXIAL GROWTH, pCH9
[10] Poate J M, 1978, THIN FILMS INTERDIFF